Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

Posted on Industry Events

Achievement paves the way to GaN power technology at high voltages above 650V

LEUVEN (Belgium) — April 6, 2018 — Today world-leading research and innovation hub in nanoelectronics and digital technologies imec, and fabless technology innovator Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST® substrates as part of their patented product portfolio. The results will be presented at next week’s CS international Conference (April 10-11, Brussels, Belgium).

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