IMEC and QROMIS Present High Performance P-Gan HEMTS on 200mm CTE-Matched Substrates

Posted on Industry News

Achievement paves the way to GaN power technology at high voltages above 650V

April 6, 2018 — Today world-leading research and innovation hub in nanoelectronics and digital technologies imec, and fabless technology innovator Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST® substrates as part of their patented product portfolio. The results were presented at the CS international Conference (April 10-11, Brussels, Belgium).

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